Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)• Pout>30W, >40% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 330-400MHz• Low-Power Control Current IGG=1mA (typ) at VGG=5V• 66 x 21 x 9.8 mm• Linear operation is possib...
RA30H3340M: Features: • Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)• Pout>30W, >40% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 330-400MHz• Low-Pow...
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SYMBOL | PARAMETER | CONDITIONS | RATING | UNIT |
VDD | Drain Voltage | VGG<5V | 17 | V |
VGG | Gate Voltage | VDD<12.5V, Pin=0mW | 6 | V |
Pin | Input Power | f=330-400MHz, ZG=ZL=50 |
100 | mW |
Pout | Output Power | 45 | W | |
Tcase(OP) | Operation Case Temperature Range | -30 to +110 | ||
Tstg | Storage Temperature Range | -40 to +110 |
The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors RA30H3340M. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.
This module RA30H3340M is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.