RA30H4045MR, RA30H4047M, RA30H4452M Selling Leads, Datasheet
MFG:mitsubishi Package Cooled:H2S D/C:09+
RA30H4045MR, RA30H4047M, RA30H4452M Datasheet download
Part Number: RA30H4045MR
MFG: mitsubishi
Package Cooled: H2S
D/C: 09+
RA30H4045MR, RA30H4047M, RA30H4452M
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Info of RA30H4045MR
Info of RA30H4047M
Info of RA30H4452M
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About RA30441241
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Datasheet: RA30441241
File Size: 132013 KB
Manufacturer: HAMLIN
Download : Click here to Download
About RA30H4047M
PDF/DataSheet Download
Datasheet: RA30H4047M
File Size: 69032 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
About RA30H4452M
PDF/DataSheet Download
Datasheet: RA30H4452M
File Size: 96928 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
RA30H4047M General Description
The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
RA30H4047M Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | RATING | UNIT |
| VDD | Drain Voltage | VGG<5V | 17 | V |
| VGG | Gate Voltage | VDD<12.5V, Pin=0mW | 6 | V |
| Pin | Input Power | f=400-470MHz, ZG=ZL=50 |
100 | mW |
| Pout | Output Power | 45 | W | |
| Tcase(OP) | Operation Case Temperature Range | -30 to +110 | ||
| Tstg | Storage Temperature Range | -40 to +110 |
RA30H4047M Features
• Enhancemen- Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)
• Pout>30W,
>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 400-470MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
• Pout>30W,
>40% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 400-470MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
RA30H4452M General Description
The RA30H4452M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
RA30H4452M Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | RATING | UNIT |
| VDD | Drain Voltage | VGG<5V | 17 | V |
| VGG | Gate Voltage | VDD<12.5V, Pin=0mW | 6 | V |
| Pin | Input Power | f=440-520MHz, ZG=ZL=50 |
100 | mW |
| Pout | Output Power | 45 | W | |
| Tcase(OP) | Operation Case Temperature Range | -30 to +110 | ||
| Tstg | Storage Temperature Range | -40 to +110 |
RA30H4452M Features
• Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)
• Pout>30W,>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• 66 x 21 x 9.8 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
• Pout>30W,
>40% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 440-520MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• 66 x 21 x 9.8 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
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