RA20H8994M, RA20NASD251A, RA2518 Selling Leads, Datasheet
MFG:MITSUBISHI D/C:08/09+
RA20H8994M, RA20NASD251A, RA2518 Datasheet download
Part Number: RA20H8994M
MFG: MITSUBISHI
Package Cooled:
D/C: 08/09+
RA20H8994M, RA20NASD251A, RA2518
- Table of contents:
Info of RA20H8994M
Info of RA20NASD251A
Info of RA2518
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About RA20H8994M
PDF/DataSheet Download
Datasheet: RA20H8994M
File Size: 69966 KB
Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]
Download : Click here to Download
About RA202000A
PDF/DataSheet Download
Datasheet: RA202000A
File Size: 469762 KB
Manufacturer: POWEREX [Powerex Power Semiconductors]
Download : Click here to Download
About RA202000A
PDF/DataSheet Download
Datasheet: RA202000A
File Size: 469762 KB
Manufacturer: POWEREX [Powerex Power Semiconductors]
Download : Click here to Download
RA20H8994M General Description
The RA20H8994M is a 20-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 896- to 941-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
RA20H8994M Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | RATING | UNIT |
| VDD | Drain Voltage | VGG<5V | 17 | V |
| VGG | Gate Voltage | VDD<12.5V, Pin=0mW | 6 | V |
| Pin | Input Power | f=896-902/ 935-941MHz, ZG=ZL=50 |
100 | mW |
| Pout | Output Power | 40 | W | |
| Tcase(OP) | Operation Case Temperature Range | -30 to +110 | ||
| Tstg | Storage Temperature Range | -40 to +110 |
RA20H8994M Features
• Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V)
• Pout>20W,
>25% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 896-902/ 935-941MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
• Pout>20W,
>25% @ VDD=12.5V, VGG=5V, Pin=50mW• Broadband Frequency Range: 896-902/ 935-941MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
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