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RA13H8891MA, RA13H8891MB, RA152T

Table of contents:
Info of RA13H8891MA
Info of RA13H8891MB
Info of RA152T

RA13H8891MA, RA13H8891MB, RA152T Selling Leads, Datasheet

MFG:MIT Package Cooled:NA D/C:09+\10+

RA13H8891MA, RA13H8891MB, RA152T Picture

RA13H8891MA, RA13H8891MB, RA152T Datasheet download

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Part Number: RA13H8891MA

MFG: MIT

Package Cooled: NA

D/C: 09+\10+

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RA13H8891MA General Description

The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to 915-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V_GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3.5V (typical) and 5V (maximum). At V_GG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

RA13H8891MA Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
V_DD	Drain Voltage	V_GG<5V	17	V
V_GG	Gate Voltage	V_DD<12.5V, P_in=200W	6	V
P_in	Input Power	f=806-870MHz, Z_G=Z_L=50	400	mW
P_out	Output Power	f=806-870MHz, Z_G=Z_L=50	25	W
T_case(OP)	Operation Case Temperature Range		-30 to +90	°C
T_stg	Storage Temperature Range		-40 to +110	°C

The above parameters are independently guaranteed

RA13H8891MA Features

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>13W, T>30% @ VDD=12.5V, VGG=5V, Pin=200mW
• Broadband Frequency Range: 889-915MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

RA13H8891MB General Description

The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to 915-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V_GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At V_GG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

RA13H8891MB Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
V_DD	Drain Voltage	V_GG<5V	17	V
V_GG	Gate Voltage	V_DD<12.5V, P_in=0W	6	V
P_in	Input Power	f=880-915MHz, Z_G=Z_L=50	5	mW
P_out	Output Power	f=880-915MHz, Z_G=Z_L=50	20	W
T_case(OP)	Operation Case Temperature Range		-30 to +90	°C
T_stg	Storage Temperature Range		-40 to +110	°C

The above parameters are independently guaranteed

RA13H8891MB Features

• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>13W, T>35% @ VDD=12.5V, VGG=5V, Pin=1mW
• Broadband Frequency Range: 880-915MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 60.5 x 14 x 6.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power

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