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N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
PHW11N50E Maximum Ratings
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDSS VDGR VGS ID IDM Ptot Tj, Tstg
Drain-source voltage Drain-gate voltage Gate-source voltage
Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k
Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25
- - - - - - - - 55
500 500 ± 30 10.4 6.6 42 156 150
V V V A A A W
PHW11N50E Features
• Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance