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PHU11NQ10T

Features: · TrenchMOS™ technology· Fast switching· Low on-state resistanceApplication· Relay driver· High speed line driver· General purpose switchPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C Tj 175 °C - ...

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SeekIC No. : 004460730 Detail

PHU11NQ10T: Features: · TrenchMOS™ technology· Fast switching· Low on-state resistanceApplication· Relay driver· High speed line driver· General purpose switchPinoutSpecifications Symbol Paramet...

PHU11NQ10T Data Sheet

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Part Number:
PHU11NQ10T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/5

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Product Details

Description



Features:

· TrenchMOS™ technology
· Fast switching
· Low on-state resistance


Application

· Relay driver
· High speed line driver
· General purpose switch


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
 drain-source voltage (DC) 25 °C Tj 175 °C
-
100
V
VDGR
 drain-gate voltage (DC) 25 °C Tj 175 °C; RGS = 20 k
-
100
V
VGS
 gate-source voltage (DC)  
-
±20
V
ID
 drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
-
10.9
A
Tmb = 100 °C; VGS = 10 V; Figure 2
-
7.7
A
IDM
 peak drain current Tmb = 25 °C; pulsed; tp 10 s;Figure 3
-
43.6
A
Ptot
 total power dissipation Tmb = 25 °C; Figure 1
-
57.7
W
Tstg
 storage temperature  
-55
+175
°C
Tj
 junction temperature  
-55
+175
°C
Source-drain diode
IS
 source (diode forward) current (DC) Tmb = 25 °C
-
10.9
A
ISM
 peak source (diode forward) current Tmb = 25 °C; tp 10 s
-
43.6
A
Avalanche ruggedness
EDS(AL)S
 non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 3.2 A;
tp = 0.2 ms; VDD 15 V; RGS = 50 ;
VGS = 10 V; starting Tj = 25 °C
-
35
mJ



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.Product availability: PHU11NQ10T in SOT533 (I-pak).




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