Features: · TrenchMOS™ technology· Fast switching· Low on-state resistanceApplication· Relay driver· High speed line driver· General purpose switchPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 °C Tj 175 °C - ...
PHU11NQ10T: Features: · TrenchMOS™ technology· Fast switching· Low on-state resistanceApplication· Relay driver· High speed line driver· General purpose switchPinoutSpecifications Symbol Paramet...
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Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
VDS |
drain-source voltage (DC) | 25 °C Tj 175 °C |
- |
100 |
V |
VDGR |
drain-gate voltage (DC) | 25 °C Tj 175 °C; RGS = 20 k |
- |
100 |
V |
VGS |
gate-source voltage (DC) |
- |
±20 |
V | |
ID |
drain current (DC) | Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 |
- |
10.9 |
A |
Tmb = 100 °C; VGS = 10 V; Figure 2 |
- |
7.7 |
A | ||
IDM |
peak drain current | Tmb = 25 °C; pulsed; tp 10 s;Figure 3 |
- |
43.6 |
A |
Ptot |
total power dissipation | Tmb = 25 °C; Figure 1 |
- |
57.7 |
W |
Tstg |
storage temperature |
-55 |
+175 |
°C | |
Tj |
junction temperature |
-55 |
+175 |
°C | |
Source-drain diode | |||||
IS |
source (diode forward) current (DC) | Tmb = 25 °C |
- |
10.9 |
A |
ISM |
peak source (diode forward) current | Tmb = 25 °C; tp 10 s |
- |
43.6 |
A |
Avalanche ruggedness | |||||
EDS(AL)S |
non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 3.2 A; tp = 0.2 ms; VDD 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 °C |
- |
35 |
mJ |
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.Product availability: PHU11NQ10T in SOT533 (I-pak).