PHU108NQ03LT,127

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 25V
Packaging: Tube
Mounting Type: Through Hole
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Vgs(th) (Max) @ Id: 2V @ 1mA
Current - Continuous Drain (Id) @ 25° C: 75A
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Rds On (Max) @ Id, Vgs: 6 mOhm @ 25A, 10V
Power - Max: 187W
Gate Charge (Qg) @ Vgs: 16.3nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 1375pF @ 12V


Parameters:

Technical/Catalog Information	PHU108NQ03LT,127
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	6 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	1375pF @ 12V
Power - Max	187W
Packaging	Tube
Gate Charge (Qg) @ Vgs	16.3nC @ 4.5V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Drawing Number	568; SOT533; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PHU108NQ03LT,127 PHU108NQ03LT,127