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PHU101NQ03LT,127

MOSFET RAIL PWR-MOS

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SeekIC No. : 00163801 Detail

PHU101NQ03LT,127: MOSFET RAIL PWR-MOS

PHU101NQ03LT,127 Data Sheet

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Part Number:
PHU101NQ03LT,127
Mfg:
NXP Semiconductors
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0055 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : IPAK
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0055 Ohms


Parameters:

Technical/Catalog InformationPHU101NQ03LT,127
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs5.5 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 2180pF @ 25V
Power - Max166W
PackagingTube
Gate Charge (Qg) @ Vgs23nC @ 5V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number568; SOT533; ;
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PHU101NQ03LT,127
PHU101NQ03LT,127



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