MOSFET RAIL PWR-MOS
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Features: · TrenchMOS™ technology· Fast switching· Low on-state resistanceApplication· Relay...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 75 A | ||
Resistance Drain-Source RDS (on) : | 0.0055 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | IPAK | Packaging : | Tube |
Technical/Catalog Information | PHU101NQ03LT,127 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 75A |
Rds On (Max) @ Id, Vgs | 5.5 mOhm @ 25A, 10V |
Input Capacitance (Ciss) @ Vds | 2180pF @ 25V |
Power - Max | 166W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 23nC @ 5V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Logic Level Gate |
Drawing Number | 568; SOT533; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PHU101NQ03LT,127 PHU101NQ03LT,127 |