PHU11NQ10T,127

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Input Capacitance (Ciss) @ Vds: 360pF @ 25V
Packaging: Tube
Mounting Type: Through Hole
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Gate Charge (Qg) @ Vgs: 14.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Current - Continuous Drain (Id) @ 25° C: 10.9A
Power - Max: 57.7W
Rds On (Max) @ Id, Vgs: 180 mOhm @ 9A, 10V


Parameters:

Technical/Catalog Information	PHU11NQ10T,127
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	10.9A
Rds On (Max) @ Id, Vgs	180 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds	360pF @ 25V
Power - Max	57.7W
Packaging	Tube
Gate Charge (Qg) @ Vgs	14.7nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Drawing Number	568; SOT533; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PHU11NQ10T,127 PHU11NQ10T,127