MFG:NXP Package Cooled:SOT533/TO-251 D/C:08+/09+
PHU108NQ03LT, PHU11NQ10T, PHU66NQ03LT Datasheet download
MFG: NXP
Package Cooled: SOT533/TO-251
D/C: 08+/09+
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PDF/DataSheet Download
Datasheet: PHU101NQ03LT
File Size: 285725 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHU11NQ10T
File Size: 253952 KB
Manufacturer: Philips
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHU101NQ03LT
File Size: 285725 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability: PHU11NQ10T in SOT533 (I-pak).
|
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
|
VDS |
drain-source voltage (DC) | 25 °C Tj 175 °C |
- |
100 |
V |
|
VDGR |
drain-gate voltage (DC) | 25 °C Tj 175 °C; RGS = 20 k |
- |
100 |
V |
|
VGS |
gate-source voltage (DC) |
- |
±20 |
V | |
|
ID |
drain current (DC) | Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 |
- |
10.9 |
A |
| Tmb = 100 °C; VGS = 10 V; Figure 2 |
- |
7.7 |
A | ||
|
IDM |
peak drain current | Tmb = 25 °C; pulsed; tp 10 s;Figure 3 |
- |
43.6 |
A |
|
Ptot |
total power dissipation | Tmb = 25 °C; Figure 1 |
- |
57.7 |
W |
|
Tstg |
storage temperature |
-55 |
+175 |
°C | |
|
Tj |
junction temperature |
-55 |
+175 |
°C | |
| Source-drain diode | |||||
|
IS |
source (diode forward) current (DC) | Tmb = 25 °C |
- |
10.9 |
A |
|
ISM |
peak source (diode forward) current | Tmb = 25 °C; tp 10 s |
- |
43.6 |
A |
| Avalanche ruggedness | |||||
|
EDS(AL)S |
non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 3.2 A; tp = 0.2 ms; VDD 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 °C |
- |
35 |
mJ |
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