PH2729-5M, PH2729-65M, PH2729-8.5M Selling Leads, Datasheet
MFG:Ma/com Package Cooled:TRANSISTOR D/C:N/A
PH2729-5M, PH2729-65M, PH2729-8.5M Datasheet download
Part Number: PH2729-5M
MFG: Ma/com
Package Cooled: TRANSISTOR
D/C: N/A
MFG:Ma/com Package Cooled:TRANSISTOR D/C:N/A
PH2729-5M, PH2729-65M, PH2729-8.5M Datasheet download
MFG: Ma/com
Package Cooled: TRANSISTOR
D/C: N/A
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Datasheet: PH2729-5M
File Size: 134989 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: PH2729-65M
File Size: 161798 KB
Manufacturer: MACOM [Tyco Electronics]
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PDF/DataSheet Download
Datasheet: PH2729-8.5M
File Size: 127505 KB
Manufacturer:
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PH2729-5M is a type of radar pulsed power transistor which has many unique features: the first one is NPN silicon Microwave power transistor. The second one is common emitter configuration. The third one is it is broadband class C operation. The forth one is new power dense interdigitated Geometry. The fifth one is diffused emitter ballasting resistors. The sixth one is gold matallization system. The seventh one is Hermatic metal/ceramic package.
There are some absolute maximum ratings about it.Collector-emitter votlage(VCES) is 63 V. Emitter-base voltage(VEBO) is 3.0 V.Collector current(peak)(Ic) is 1.1 A.Power dissipation(PD) is 40 W.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -65 to +200.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BVCES) is 63 V min when Ic is 10 mA. Collector-emitter leakage current(ICES) is 1.0 mA max when VCE is 40 V.Output Power (Pout) is 5.0 W min when Vcc is 36 V, F is 2.7,2.8,2.9GHz,Pin is 1.0 W. Collector efficiency is 30% min when Vcc is 36 V, F is 2.7,2.8,2.9 GHz,Pin is 1.0 W.
Well, this is a simple introduction to this type of product, if you want to know more about it, please pay more attention to our web. Thanks for your attention!
Parameter | Symbol | Rating | Units |
Collector-Emitter Voltage | VCES | 65 | V |
Emitter-Base Voltage | VEBO | 3.0 | V |
Collector Current (Peak) | IC | 8.0 | A |
Total Power Dissipation | PTOT | 330 | W |
Junction Temperature | Tj | 200 | |
Storage Temperature |
Tstg | -65 to +200 |
PH2729-8.5M is a type of radar pulsed power transistor which has many unique features: The first one is NPN silicon Microwave power transistor. The second one is common base configuration. The third one is it is broadband class C operation. The forth one is high efficiency interdigitated Geometry. The fifth one is diffused emitter ballasting resistors. The sixth one is gold matallization system. The seventh one is Hermatic metal/ceramic package.The eighth one is internal input and output impedance matching.
There are some absolute maximum ratings about it.Collector-emitter votlage(VCES) is 65 V. Emitter-base voltage(VEBO) is 3.0 V.Collector current(peak)(Ic) is 1.8 A.Total Power dissipation(Ptot) is 65 W.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -65 to +200.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BVCES) is 65 V min when Ic is 10 mA. Collector-emitter leakage current(ICES) is 1.5 mA max when VCE is 40 V.Output Power (Pout) is 8.5 W min when Vcc is 36 V, F is 2.7,2.8,2.9GHz,Pin is 1.3 W. Collector efficiency is 35% min when Vcc is 36 V, F is 2.7,2.8,2.9 GHz,Pin is 1.3 W.
Well, this is a simple introduction to this type of product, if you want to know more about it, please pay more attention to our web. Thanks for your attention!