PH2022-10SC

PH2022-10SC is a type of oscillator power transistor which has many unique features: the first one is NPN silicon Microwave power transistor. The second one is common emitter configuration. The third one is it is designed for S-band applications. The forth one is interdigitated Geometry. The fifth one is diffused emitter ballasting resistors. The sixth one is gold matallization system. The seventh one is Hermatic metal/ceramic package. The eighth one is it is used for coaxial,stripline, and lumped elments circuits.

There are some absolute maximum ratings about PH2022-10SC.Collector-base voltage(V_CBO) is 40 V. Collector-emitter votlage(V_CEO) is 14.0 V. Collector current(peak)(Ic) is 0.22 A.Power dissipation(P_D) is 8.5 W. Junction temperature(Tj) is 200. Storage temperature(Tstg) is -65 to +200.Otherwise, there are some electrical characteristics.Collector-base breakdwon voltage(BV_CBO) is 40 V min when Ic is 100 uA. Collector-emitter nreakdwon voltage(BV_CEO) is 14 V min when Ic is 500 uA. Collector-base leakage current(I_CBO) is 1.0 uA max when V_CB is 36 V. Collector-base capacitance(Cob) is 2.0 pF min when f is 1 MHz and V_CE is 30 V. Power output(Pout) is 1.0 W min when Vcc is 28 V, F is 2.0 GHz. Collector efficiency is 24% when Vcc is 28 V and F is 2.0 GHz.Otherwise, there are also some electrical characteristics about it. Collector-base breakdwon voltage(BV_CBO) is 40 V min when Ic is 100 uA. Collector-emitter breakdwon voltage(BV_CEO) is 14 V when Ic is 500 uA. Collector-base leakage current(I_CBO) is 1.0 uA max when V_CB is 36 V. Collector-base capacitance(Cob) is 2.0 pF when f is 1 MHz and V_CE is 30 V. Power output(Pout) is 1.0 W when Vcc is 28 V and F is 2.0 GHz. Collector efficiency is 24% min when Vcc is 28 V and F is 2.0 GHz. Oscillation frequency(f_OSC) is 2.0 GHz min and 2.2 GHz typ when Vcc is 28 V. 

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