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PH20100S

Features: ·Low thermal resistance·Low gate drive current·SO8 equivalent area footprint·Low on-state resistance.Application·DC-to-DC converters·Switched-mode power suppliesPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 Tj 150 - 10...

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SeekIC No. : 004460202 Detail

PH20100S: Features: ·Low thermal resistance·Low gate drive current·SO8 equivalent area footprint·Low on-state resistance.Application·DC-to-DC converters·Switched-mode power suppliesPinoutSpecifications S...

PH20100S Data Sheet

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Part Number:
PH20100S
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·Low thermal resistance
·Low gate drive current
·SO8 equivalent area footprint
·Low on-state resistance.


Application

·DC-to-DC converters
·Switched-mode power supplies


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 150 - 100 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 34.3 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 21.6 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 137 A
Ptot total power dissipation Tmb = 25 - 62.5 W
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 52 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 137 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 12 A;
tp = 0.3 ms; VDD 100 V; VGS = 10 V; starting at Tj = 25 		- 250 mJ



Description

PH20100S, Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology.


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