PH2226-110M

Features: ·NPN Silicon Power Transistor·Common Base Configuration·Broadband Class C Operation·Diffused Emitter Ballasting Resistors·Gold Metalization System·Internal Input Impedance Matching·Hermetic Metal/Ceramic PackageSpecifications Parameter Symbol Rating Units Collector-Emitter Vol...

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SeekIC No. : 004460210 Detail

PH2226-110M: Features: ·NPN Silicon Power Transistor·Common Base Configuration·Broadband Class C Operation·Diffused Emitter Ballasting Resistors·Gold Metalization System·Internal Input Impedance Matching·Hermeti...

floor Price/Ceiling Price

Part Number:
PH2226-110M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/25

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Product Details

Description



Features:

·NPN Silicon Power Transistor
·Common Base Configuration
·Broadband Class C Operation
·Diffused Emitter Ballasting Resistors
·Gold Metalization System
·Internal Input Impedance Matching
·Hermetic Metal/Ceramic Package



Specifications

Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 63 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 15 A
Total Power Dissipation PTOT 583 W
Junction Temperature Tj 200
Storage Temperature
Tstg -65 to +200



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