Features: ·NPN Silicon Power Transistor·Common Base Configuration·Broadband Class C Operation·Diffused Emitter Ballasting Resistors·Gold Metalization System·Internal Input Impedance Matching·Hermetic Metal/Ceramic PackageSpecifications Parameter Symbol Rating Units Collector-Emitter Vol...
PH2226-110M: Features: ·NPN Silicon Power Transistor·Common Base Configuration·Broadband Class C Operation·Diffused Emitter Ballasting Resistors·Gold Metalization System·Internal Input Impedance Matching·Hermeti...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Symbol | Rating | Units |
Collector-Emitter Voltage | VCES | 63 | V |
Emitter-Base Voltage | VEBO | 3.0 | V |
Collector Current (Peak) | IC | 15 | A |
Total Power Dissipation | PTOT | 583 | W |
Junction Temperature | Tj | 200 | |
Storage Temperature |
Tstg | -65 to +200 |