PH0810-4, PH0810-60A, PH0810-60B

PH0810-4 is a type of wireless bipolar power transistor which has many unique features: The first one is it is designed for linear amplifier applications. The second one is common emitter configuration.The third one is diffused emitter ballasting. The forth one is internal input and output impedance matching. The fifth one is class AB is -32 dBc typ 3rd IMD at 150 watts PEP.The sixth one is NPN silicon Mircrowave power transistor.The seventh one is gold metallization system.
 
There are some absolute maximum ratings about it.Collector-emitter votlage(V_CES) is 60 V.Collector-emitter voltage(V_CEO) is 60 V.Emitter-base voltage(V_EBO) is 3.0 V.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -55 to +150.Collector current(peak)(Ic) is 0.7 A.Total power dissipation(Ptot) is 19.5 W.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 60 V min when Ic is 5 mA. Collector-emitter leakage current(I_CES) is 2.0 mA max when V_CE is 24.0 V.Power gain(Gp) is 14 dB min when Vcc is 24 V,Pout is 4 W PEP, F is 900 MHz, I_CQ is 30 mA. Collector efficiency is 45% min when Vcc is 24 V,Pout is 4 W PEP, F is 900 MHz, I_CQ is 30 mA.Input return loss is 10 dB min when Vcc is 24 V,Pout is 4 W PEP, F is 900 MHz, I_CQ is 30 mA.Load mismatch tolerance is 10:1 typ when Vcc is 24 V,Pout is 4 W PEP, F is 900 MHz, I_CQ is 30 mA.DC forward current gain is 15 min and 120 typ when V_CE is 5.0 V and IC is 1.0 A.

Well, this is a simple introduction to this type of product, if you want to know more about it, please pay more attention to our web. Thanks for your attention!

PH0810-60B is a type of wireless bipolar power transistor which has five unique features: The first one is it is designed for linear amplifier applications. The second one is common emitter configuration.The third one is diffused emitter ballasting. The forth one is internal input and output impedance matching. The fifth one is class AB is -32 dBc typ 3rd IMD at 60 watts PEP.
 
There are some absolute maximum ratings about it.Collector-emitter votlage(V_CES) is 60 V.Collector-base voltage(V_CBO) is 60 V.Emitter-base voltage(V_EBO) is 3.0 V.Junction temperature(Tj) is 200. Storage temperature(T_stg) is -55 to +150.Collector current(peak)(Ic) is 10 A.Total power dissipation(Ptot) is 100 W.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 60 V min when Ic is 50 mA. Collector-emitter leakage current(I_CES) is 8.0 mA max when V_CE is 26.0 V.Power gain(Gp) is 10 dB min when Vcc is 26 V,Pout is 60 W PEP, F is 900 MHz, I_CQ is 150 mA,F is 100 kHz . Collector efficiency is 35% min when Vcc is 26 V,Pout is 60 W PEP, F is 900 MHz, I_CQ is 150 mA,F is 100 kHz.Input return loss is 10 dB min when Vcc is 26 V,Pout is 60 W PEP, F is 900 MHz, I_CQ is 150 mA,F is 100 kHz.Load mismatch tolerance is 3.0:1 typ when Vcc is 26 V,Pout is 60 W PEP, F is 900 MHz, I_CQ is 150 mA,F is 100 kHz.DC forward current gain is 15 min and 120 typ when V_CE is 5.0 V and I_C is 1.0 A.Collector-emitter breakdown voltage(BV_CEO) is 24 V min when Ic is 80 mA. Emitter-base breakdown voltage(BV_EBO) is 3.0 V min whne IB is 50 mA.

Well, this is a simple introduction to this type of product, if you want to know more about it, please pay more attention to our web. Thanks for your attention!