PH0303-8

PH0303-8 is a type of CW power transistor which has many unique features: The first one is NPN silicon Microwave power transistor. The second one is common base configuration.The third one is diffused emitter ballasting resistors. The forth one is gold matallization system. The fifth one is hermatic metal/ceramic package.The seventh one is broadband class AB operation.

There are some absolute maximum ratings about PH0303-8.Collector-emitter votlage(V_CES) is 60 V.Emitter-base voltage(V_EBO) is 3.5 V.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -65 to +200.Collector current(peak)(Ic) is 2 A.Power dissipation(P_D) is 35W.Thermal resistance is 50/W.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 60 V min when Ic is 10 mA, V_BE is 0 V. Base-emitter breakdwon voltage(BV_CEO) is 3.5 V when IB is 2.0mA and Ic is 0 A.Collector-emitter leakage current(I_CES) is 0.5 mA max when V_CE is 30 V.DC forward current gain(h_FE) is 20 typ and 85 max when V_CE is 5.0 V and Ic is 500 mA.Input power(Pin) is 50 W max when Vcc is 26 V,Pout is 8.0 W,I_CQ is 10 mA, F is 300,324 MHz.Power gian(Gp) is 12 dB min when Vcc is 26 V,Pout is 8.0 W,I_CQ is 10 mA, F is 300,324 MHz. Collector efficiency is 45% min when Vcc is 26 V,Pout is 8.0 W,I_CQ is 10 mA, F is 300,324 MHz.Input return loss is 9 dB min when Vcc is 26 V,Pout is 8.0 W,ICQ is 10 mA, F is 300,324 MHz.Load mismatch tolerance is 3:1 typ when Vcc is 26 V,Pout is 8.0 W,I_CQ is 10 mA, F is 300,324 MHz.

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