PF0141, PF01411, PF01411A-TB Selling Leads, Datasheet
MFG:1412 Package Cooled:N/A D/C:N/A
PF0141, PF01411, PF01411A-TB Datasheet download
Part Number: PF0141
MFG: 1412
Package Cooled: N/A
D/C: N/A
MFG:1412 Package Cooled:N/A D/C:N/A
PF0141, PF01411, PF01411A-TB Datasheet download
MFG: 1412
Package Cooled: N/A
D/C: N/A
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Datasheet: PF0141
File Size: 31936 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: PF01411
File Size: 26492 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
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PDF/DataSheet Download
Datasheet: PF0
File Size: 209436 KB
Manufacturer:
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PF0141,the MOS FET power amplifier module for GSM handy phone, has three unique features: The first one is high speed switching which is 0.9 us typ. The second one is high efficiency which is 45% typ. The third one is wide power control range which is 85 dB typ.
There are some absolute maximum ratings about it when Tc is 258.Supply voltage(VDD) is 12 V. Supply current(IDD) is 3 A. APC voltage(VAPC) is 4 V. Input power(Pin) is 20 mW. Operating case temperature is -30 to +100.Storage temperature(Tstg) is -30 to +100.Otherwise, there are also some electrical characteristics about it when Ta is 25. Drain cutoff current(IDS) is 100 uA max when VDD is 12 V, VAPC is 0 V.2nd harmonic distortion(2ndH.D.) is -40 dB typ and -30 dB max when Pin is 2 mW, VDD is 6 V, Pout is 3.2 W(at APC controlled), RL is equal to Rg which is 50 ohms, Tc is 25.3rd harmonic distortion(3rd H.D.) is -40 dB typ and -30 dB max when Pin is 2 mW, VDD is 6 V, Pout is 3.2 W(at APC controlled), RL is equal to Rg which is 50 ohms, Tc is 25.Input VSWR is 2 typ and 3 max when Pin is 2 mW, VDD is 6 V, Pout is 3.2 W(at APC controlled), RL is equal to Rg which is 50 ohms, Tc is 25.Output power is 3.6 W min and 4.5 V typ when Pin is 2 mW, VDD is 6 V, Pout is 3.2 W(at APC controlled), RL is equal to Rg which is 50 ohms, Tc is 25.
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