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NTR3162PT3G, NTR4003NT3G, NTR4101P

Table of contents:
Info of NTR3162PT3G
Info of NTR4003NT3G
Info of NTR4101P

NTR3162PT3G, NTR4003NT3G, NTR4101P Selling Leads, Datasheet

MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT-23 (TO-236) 3 LEAD D/C:08+

NTR3162PT3G, NTR4003NT3G, NTR4101P Picture

NTR3162PT3G, NTR4003NT3G, NTR4101P Datasheet download

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Part Number: NTR3162PT3G

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: SOT-23 (TO-236) 3 LEAD

D/C: 08+

Description: MOSFET N-CH 30V 0.56A SOT-23

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NTR3162PT3G Parameters

Technical/Catalog Information	NTR3162PT3G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2.2A
Rds On (Max) @ Id, Vgs	70 mOhm @ 2.2A, 4.5V
Input Capacitance (Ciss) @ Vds	940pF @ 10V
Power - Max	480mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10.3nC @ 4.5V
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTR3162PT3G NTR3162PT3G

NTR4003NT3G Parameters

Technical/Catalog Information	NTR4003NT3G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	500mA
Rds On (Max) @ Id, Vgs	1.5 Ohm @ 10mA, 4V
Input Capacitance (Ciss) @ Vds	21pF @ 5V
Power - Max	690mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	1.15nC @ 5V
Package / Case	SOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTR4003NT3G NTR4003NT3G NTR4003NT3GOSTR ND NTR4003NT3GOSTRND NTR4003NT3GOSTR

NTR4003NT3G General Description

The NTR4003NT3G is one member of the NTR4003N series.It has the following features including (1)low gate voltage threshold (VGS(TH)) to facilitate drive circuit design;(2)low gate charge for fast switching;(3)ESD protected gate;(4)SOT-23 package provides excellent thermal performance;(5)minimum breakdown voltage rating of 30 V.

Stresses exceeding maximum ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).

SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages."Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.

NTR4101P Maximum Ratings

Parameter			Symbol	Value	Units
Drain−to−Source Voltage			V_DSS	-20	V
Gate−to−Source Voltage			V_GS	±8	V
Continuous Drain Current (Note 1)	Steady State	TA = 25 °C	I_D	-2.4	A
		TA = 85°C		-1.7
	tp10 s	TA = 25 °C		-3.2
Power Dissipation (Note 1)	Steady State	TA = 25 °C	P_d	0.73	W
	tp10 s			1.25
Continuous Drain Current (Note 2)	Steady State	TA = 25 °C	I_D	-1.8	A
		TA = 85 °C		-1.3
Power Dissipation (Note 2)		TA = 25 °C	P_d	0.42	W
Pulsed Drain Current		tp = 10 s	I_DM	-7.5	A
ESD Capability (Note 3)	C = 100 pF, RS = 1500		ESD	225
Operating Junction and Storage Temperature			T_J, T_stg	−55 to 150	°C
Source Current (Body Diode)			Ls	-2.4	A
Lead Temperature for Soldering Purposes (1/8" from case for 10 s)			T_L	260	°C

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

NTR4101P Features

• Leading −20 V Trench for Low RDS(on)
• −1.8 V Rated for Low Voltage Gate Drive
• SOT−23 Surface Mount for Small Footprint
• Pb−Free Package is Available

NTR4101P Typical Application

• Load/Power Management for Portables
• Load/Power Management for Computing
• Charging Circuits and Battery Protection

NTR4101P Connection Diagram

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