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NTR1P02T1

MOSFET -20V -1A P-Channel

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SeekIC No. : 00166794 Detail

NTR1P02T1: MOSFET -20V -1A P-Channel

NTR1P02T1 Data Sheet

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Part Number:
NTR1P02T1
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 180 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 180 mOhms
Continuous Drain Current : 1 A


Features:

• Ultra Low On−Resistance Provides Higher Efficiency
  and Extends Battery Life
  RDS(on) = 0.180 , VGS = −10 V
  RDS(on) = 0.280 , VGS = −4.5 V
• Power Management in Portable and Battery−Powered Products
• Miniature SOT−23 Surface Mount Package Saves Board Space
• Mounting Information for SOT−23 Package Provided


Application

• DC−DC Converters
• Computers
• Printers
• PCMCIA Cards
• Cellular and Cordless Telephones


Pinout

Connection Diagram


Specifications

Rating Symbol Value Unit
DraintoSource Voltage
 VDSS -20 V
GatetoSource Voltage− Continuous VGS ±20 V
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp 3 10 s)		 ID
IDM		 −1.0
−2.67		 A
A
Operating and Storage Temperature Range TJ, Tstg 55 to
150		 °C
Total Power Dissipation @ TA= 25°C
(Note 2)		 Pd 400 mW
Thermal Resistance Junction to Ambient
 RJA 300 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 s.		 TL 260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.


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