Features: • Leading −20 V Trench for Low RDS(on)• −1.8 V Rated for Low Voltage Gate Drive• SOT−23 Surface Mount for Small Footprint• Pb−Free Package is AvailableApplication• Load/Power Management for Portables• Load/Power Management for C...
NTR4101P: Features: • Leading −20 V Trench for Low RDS(on)• −1.8 V Rated for Low Voltage Gate Drive• SOT−23 Surface Mount for Small Footprint• Pb−Free Package i...
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Parameter | Symbol | Value | Units | ||
Drain−to−Source Voltage | VDSS | -20 | V | ||
Gate−to−Source Voltage | VGS | ±8 | V | ||
Continuous Drain Current (Note 1) |
Steady State |
TA = 25 °C | ID | -2.4 | A |
TA = 85°C | -1.7 | ||||
tp10 s | TA = 25 °C | -3.2 | |||
Power Dissipation (Note 1) |
Steady State | TA = 25 °C | Pd | 0.73 | W |
tp10 s | 1.25 | ||||
Continuous Drain Current (Note 2) |
Steady State |
TA = 25 °C | ID | -1.8 | A |
TA = 85 °C | -1.3 | ||||
Power Dissipation (Note 2) |
TA = 25 °C | Pd | 0.42 | W | |
Pulsed Drain Current | tp = 10 s | IDM | -7.5 | A | |
ESD Capability (Note 3) | C = 100 pF, RS = 1500 |
ESD | 225 | ||
Operating Junction and Storage Temperature | TJ, Tstg | −55 to 150 |
°C | ||
Source Current (Body Diode) | Ls | -2.4 | A | ||
Lead Temperature for Soldering Purposes (1/8" from case for 10 s) |
TL | 260 | °C |