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NTD4302, NTD4302-001, NTD4302-1G

Table of contents:
Info of NTD4302
Info of NTD4302-001
Info of NTD4302-1G

NTD4302, NTD4302-001, NTD4302-1G Selling Leads, Datasheet

MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT252 D/C:N/A

NTD4302, NTD4302-001, NTD4302-1G Datasheet download

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Part Number: NTD4302

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: SOT252

D/C: N/A

Description: MOSFET N-CH 30V 5.3A IPAK

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NTD4302 Parameters

Technical/Catalog Information	NTD4302
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	5.3A
Rds On (Max) @ Id, Vgs	10 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	2400pF @ 24V
Power - Max	1.04W
Packaging	Tube
Gate Charge (Qg) @ Vgs	80nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTD4302 NTD4302

NTD4302 Maximum Ratings

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	V_DSS	24	Vdc
Gate−to−Source Voltage − Continuous	V_DGR	±20	Vdc
Thermal Resistance − Junction−to−Case Total Power Dissipation @ T_C = 25°C Continuous Drain Current @ T_C = 25°C (Note 4) Continuous Drain Current @ T_C = 100°C	R_JC P_D I_DI_D	1.65 75 68 43	°C/W Watts Amps Amps
Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ T_A = 25°C Continuous Drain Current @ T_A = 25°C Continuous Drain Current @ T_A= 100°C Pulsed Drain Current (Note 3)	R_JAP_D I_DI_D I_DM	67 1.87 11.3 7.1 36	°C/W Watts Amps Amps Amps
Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ T_A = 25°C Continuous Drain Current @ T_A= 25°C Continuous Drain Current @ T_A = 100°C Pulsed Drain Current (Note 3)	R_JAP_D I_DI_D I_DM	120 1.04 8.4 5.3 28	°C/W Watts Amps Amps Amps
Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ T_A = 25°C Continuous Drain Current @ T_A = 25°C Continuous Drain Current @ T_A = 100°C Pulsed Drain Current (Note 3)	T_J,T_stg	−55 to150
Single Pulse Drain−to−Source Avalanche Energy − Starting T_J = 25°C (V_DD = 30 Vdc, V_GS = 10 Vdc, Peak I_L = 17 Apk, L = 5.0 mH, R_G = 25 W)	E_AS	722	mJ
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds	T_L	260

1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
4. Current Limited by Internal Lead Wires.

NTD4302 Features

• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• IDSS Specified at Elevated Temperature
• DPAK Mounting Information Provided

NTD4302 Typical Application

• DC−DC Converters
• Low Voltage Motor Control
• Power Management in Portable and Battery Powered Products: i.e., Computers, Printers, Cellular and Cordless Telephones, and PCMCIA Cards

NTD4302-1G Parameters

Technical/Catalog Information	NTD4302-1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	5.3A
Rds On (Max) @ Id, Vgs	10 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	2400pF @ 24V
Power - Max	1.04W
Packaging	Tube
Gate Charge (Qg) @ Vgs	80nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTD4302 1G NTD43021G

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