MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:04+
NTD3055L, NTD3055L104, NTD3055L104001 Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Package Cooled: TO-220
D/C: 04+
Description: MOSFET N-CH 60V 12A DPAK
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PDF/DataSheet Download
Datasheet: NTD3055L104
File Size: 76015 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NTD3055L104
File Size: 76015 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NTD110N02R
File Size: 65651 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NTD3055L104 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 12A |
| Rds On (Max) @ Id, Vgs | 104 mOhm @ 6A, 5V |
| Input Capacitance (Ciss) @ Vds | 440pF @ 25V |
| Power - Max | 1.5W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 20nC @ 5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | NTD3055L104 NTD3055L104 |
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
| Rating |
Symbol |
Value |
Unit |
| Drain−to−Source Voltage |
VDSS |
60 |
Vdc |
| Drain−to−Gate Voltage (RGS = 10 M) |
VDGR |
60 |
Vdc |
| Gate−to−Source Voltage − Continuous − Non−Repetitive (tp10 ms) |
VGS VGS |
±15 ±20 |
Vdc |
| Drain Current − Continuous @ TC = 25 − Continuous @ TC = 100 − Single Pulse (tp10 s) |
ID ID IDM |
12 10 45 |
Adc Apk |
| Total Power Dissipation @ TC = 25 Derate above 25 Total Power Dissipation @ TC = 25 (Note 1) Total Power Dissipation @ TC = 25 (Note 2) |
PD |
48 0.32 2.1 1.5 |
W |
| Operating and Storage Temperature Range |
TJ, Tstg |
−55 to +175 |
|
| Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25 (VDD = 25 Vdc, VGS = 5.0 Vdc, L = 1.0 mH IL(pk) = 11 A, VDS = 60 Vdc) |
EAS |
61 |
mJ |
| Thermal Resistance− Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) |
RJC RJA RJA |
3.13 71.4 110 |
/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds |
TL |
260 |
|
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