NE32484A, NE32484-T1, NE32500 Selling Leads, Datasheet
MFG:NEC Package Cooled:NA/ D/C:00+
NE32484A, NE32484-T1, NE32500 Datasheet download
Part Number: NE32484A
MFG: NEC
Package Cooled: NA/
D/C: 00+
NE32484A, NE32484-T1, NE32500
- Table of contents:
Info of NE32484A
Info of NE32484-T1
Info of NE32500
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About NE32484A
PDF/DataSheet Download
Datasheet: NE32484A
File Size: 65336 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
About NE3002-GV10A
PDF/DataSheet Download
Datasheet: NE3002-GV10A
File Size: 90797 KB
Manufacturer: ROHM [Rohm]
Download : Click here to Download
About NE32500
PDF/DataSheet Download
Datasheet: NE32500
File Size: 40778 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
NE32484A General Description
The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
NE32484A Maximum Ratings
| Drain to Source Voltage | VDS | 4.0 | V |
| Gate to Source Voltage | VGS | 3.0 | V |
| Drain Current | ID | IDSS | mA |
| Gate Current | IG | 100 | A |
| Total Power Dissipation | Ptot | 165 | mW |
| Channel Temperature | Tch | 150 | |
| Storage Temperature | Tstg | 65 to +150 |
NE32484A Features
• Super Low Noise Figure & High Associated Gain
NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz
• Gate Length : Lg 0.25 m
• Gate Width : Wg = 200 m
NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz
• Gate Length : Lg 0.25 m
• Gate Width : Wg = 200 m
NE32500 General Description
NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.
NE32500 Maximum Ratings
| Drain to Source Voltage | VDS | 4.0 | V |
| Gate to Source Voltage | VGS | 3.0 | V |
| Drain Current | ID | IDSS | mA |
| Total Power Dissipation | Ptot* | 200 | mW |
| Channel Temperature | Tch | 175 | |
| Storage Temperature | Tstg | 65 to +175 | |
| * Chip mounted on a Alumina heatsink (size: 3*3 * 0.6t) | |||
NE32500 Features
• Super Low Noise Figure & High Associated Gain
NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
• Gate Length: Lg = 0.2 m
• Gate Width : Wg = 200 m
NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
• Gate Length: Lg = 0.2 m
• Gate Width : Wg = 200 m
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