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NE3210, NE321000, NE3210S01-T1

Table of contents:
Info of NE3210
Info of NE321000
Info of NE3210S01-T1

NE3210, NE321000, NE3210S01-T1 Selling Leads, Datasheet

MFG:N/A Package Cooled:N/A D/C:9+

NE3210, NE321000, NE3210S01-T1 Datasheet download

Five Points

Part Number: NE3210

MFG: N/A

Package Cooled: N/A

D/C: 9+

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NE321000 General Description

The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications.

NE321000 Maximum Ratings

Parameter	Symbol	Ratings	Unit
Drain to Source Voltage	V_DS	4.0	V
Gate to Source Voltage	V_GS	3.0	V
Drain Current	I_D	I_DSS	mA
Gate Current	I_G	100	A
Total Power Dissipation	P_tot^Note	200	mW
Channel Temperature	T_ch	175
Storage Temperature	T_stg	65 to +175

Note Chip mounted on an Alumina heatsink (size: 3 * 3* 0.6 t)

NE321000 Features

• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz
• Gate Length: L_g 0.20 m
• Gate Width : W_g= 160 m

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