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NE32184A-1.1, NE32384A, NE32400

Table of contents:
Info of NE32184A-1.1
Info of NE32384A
Info of NE32400

NE32184A-1.1, NE32384A, NE32400 Selling Leads, Datasheet

MFG:NEC Package Cooled:N/A D/C:N/A

NE32184A-1.1, NE32384A, NE32400 Datasheet download

Five Points

Part Number: NE32184A-1.1

MFG: NEC

Package Cooled: N/A

D/C: N/A

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NE32400 General Description

NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.

NE32400 Maximum Ratings

Drain to Source Voltage	V_DS	4.0	V
Gate to Source Voltage	V_GS	3.0	V
Drain Current	I_D	I_DSS	mA
Total Power Dissipation	P_tot*	200	mW
Channel Temperature	T_ch	175
Storage Temperature	T_stg	65 to +175
* Chip mounted on a Alumina heatsink (size: 33 0.6^t)

NE32400 Features

• Super Low Noise Figure & High Associated Gain
NF = 0.6 dB TYP., G_a = 11.0 dB TYP. at f = 12 GHz
• Gate Length: L_g = 0.25 m
• Gate Width : W_g= 200 m

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