MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:Sot-223 D/C:09+
NDT456, NDT456P, NDT456P-NL Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: Sot-223
D/C: 09+
Description: MOSFET P-CH 30V 7.5A SOT-223-4
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PDF/DataSheet Download
Datasheet: NDT456
File Size: 249183 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDT456P
File Size: 249183 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDT014
File Size: 230704 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NDT456P |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 7.5A |
| Rds On (Max) @ Id, Vgs | 30 mOhm @ 7.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1440pF @ 15V |
| Power - Max | 1.1W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 67nC @ 10V |
| Package / Case | SOT-223-4 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDT456P NDT456P NDT456PCT ND NDT456PCTND NDT456PCT |
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
| Symbol | Parameter | NDT456P | Units |
| VDSS | Drain-Source Voltage | -30 | V |
| VGSS | Gate-Source Voltage - Continuous | ±20 | V |
| ID | Drain Current - Continuous (Note 1a) - Pulsed |
±7.5 | A |
| ±20 | |||
| PD | Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) |
3 | W |
| 1.3 | |||
| 1.1 | |||
| TJ,TSTG | Operating and Storage Temperature Range | -65 to 150 | |
| THERMAL CHARACTERISTICS | |||
| RJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 42 | /W |
| RJC | Thermal Resistance, Junction-to-Case (Note 1) | 12 | /W |
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