MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:Sot-223 D/C:07+
NDT451AN, NDT451N, NDT452 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: Sot-223
D/C: 07+
Description: MOSFET N-CH 30V 5.5A SOT-223-4
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PDF/DataSheet Download
Datasheet: NDT451AN
File Size: 232574 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: NDT451N
File Size: 231918 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDT452
File Size: 233007 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NDT451AN |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 7.2A |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 7.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 720pF @ 15V |
| Power - Max | 1.1W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Package / Case | SOT-223-4 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDT451AN NDT451AN NDT451ANDKR ND NDT451ANDKRND NDT451ANDKR |
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
| Symbol | Parameter | NDT451AN | Units |
| VDSS | Drain-Source Voltage | 30 | V |
| VGSS | Gate-Source Voltage - Continuous | ±20 | V |
| ID | Drain Current - Continuous (Note 1a) - Pulsed |
± 7.2 | A |
| ± 25 | |||
| PD | Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) |
3 | W |
| 1.3 | |||
| 1.1 | |||
| TJ,TSTG | Operating and Storage Temperature Range | -65 to 150 | |
| THERMAL CHARACTERISTICS | |||
| RJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 42 | /W |
| RJC | Thermal Resistance, Junction-to-Case (Note 1) | 12 | /W |
| * Order option J23Z for cropped center drain lead. | |||
| Technical/Catalog Information | NDT451N |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5.5A |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 5.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 730pF @ 10V |
| Power - Max | 1.1W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | SOT-223-4 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | NDT451N NDT451N NDT451NCT ND NDT451NCTND NDT451NCT |
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
| Symbol | Parameter | NDT451N | Units |
| VDSS | Drain-Source Voltage | 30 | V |
| VGSS | Gate-Source Voltage - Continuous | ±20 | V |
| ID | Drain Current - Continuous (Note 1a) - Pulsed |
±5.5 | A |
| ±25 | |||
| PD | Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) |
3 | W |
| 1.3 | |||
| 1.1 | |||
| TJ,TSTG | Operating and Storage Temperature Range | -65 to 150 | |
| THERMAL CHARACTERISTICS | |||
| RJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 42 | /W |
| RJC | Thermal Resistance, Junction-to-Case (Note 1) | 12 | /W |
| * Order option J23Z for cropped center drain lead. | |||
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