NDS9956A-NL, NDS9956-NL, NDS9957 Selling Leads, Datasheet
MFG:FAIRCHILD Package Cooled:SOP-8 D/C:06+
NDS9956A-NL, NDS9956-NL, NDS9957 Datasheet download
Part Number: NDS9956A-NL
MFG: FAIRCHILD
Package Cooled: SOP-8
D/C: 06+
NDS9956A-NL, NDS9956-NL, NDS9957
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Info of NDS9956A-NL
Info of NDS9956-NL
Info of NDS9957
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About NDS02ZG-M6
PDF/DataSheet Download
Datasheet: NDS02ZG-M6
File Size: 320036 KB
Manufacturer: POWER-ONE [Power-One]
Download : Click here to Download
About NDS02ZG-M6
PDF/DataSheet Download
Datasheet: NDS02ZG-M6
File Size: 320036 KB
Manufacturer: POWER-ONE [Power-One]
Download : Click here to Download
About NDS9957
PDF/DataSheet Download
Datasheet: NDS9957
File Size: 349070 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
NDS9957 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
NDS9957 Maximum Ratings
| Symbol | Parameter | NDS9957 | Units |
| VDSS | Drain-Source Voltage | 60 | V |
| VGSS | Gate-Source Voltage | ± 20 | V |
| ID | Drain Current - Continuous (Note 1a) - Pulsed |
± 2.6 | A |
| ± 10 | |||
| PD | Power Dissipation for Dual Operation | 2 | W |
|
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
1.6 | ||
| 1 | |||
| 0.9 | |||
| TJ,TSTG | Operating and Storage Temperature Range | -55 to 150 | |
| THERMAL CHARACTERISTICS | |||
| RJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 78 | /W |
| RJC | Thermal Resistance, Junction-to-Case (Note 1) | 40 | /W |
NDS9957 Features
`2.6A, 60V. RDS(ON) = 0.16 @ VGS = 10V.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.
`Dual MOSFET in surface mount package.
`High density cell design for extremely low RDS(ON).
`High power and current handling capability in a widely used surface mount package.
`Dual MOSFET in surface mount package.
NDS9957 Connection Diagram
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