MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:SMD D/C:06 07
NDS9955-NL, NDS9956, NDS9956A Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: SMD
D/C: 06 07
Description: MOSFET 2N-CH 30V 3.7A 8-SOIC
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PDF/DataSheet Download
Datasheet: NDS02ZG-M6
File Size: 320036 KB
Manufacturer: POWER-ONE [Power-One]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDS9956
File Size: 349321 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDS9956A
File Size: 349321 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NDS9956A |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 3.7A |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 2.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 320pF @ 10V |
| Power - Max | 900mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 27nC @ 10V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDS9956A NDS9956A NDS9956ACT ND NDS9956ACTND NDS9956ACT |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC/DC conversion and DC motor control where fast switching, low in-line power loss, and resistance to transients are needed.
| Symbol | Parameter | NDS9956A | Units |
| VDSS | Drain-Source Voltage | 30 | V |
| VGSS | Gate-Source Voltage | ± 20 | V |
| ID | Drain Current - Continuous (Note 1a) - Pulsed |
± 3.7 | A |
| ± 15 | |||
| PD | Power Dissipation for Dual Operation | 2 | W |
|
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
1.6 | ||
| 1 | |||
| 0.9 | |||
| TJ,TSTG | Operating and Storage Temperature Range | -55 to 150 | |
| THERMAL CHARACTERISTICS | |||
| RJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 78 | /W |
| RJC | Thermal Resistance, Junction-to-Case (Note 1) | 40 | /W |
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