NDS9953DY, NDS9953-NL, NDS9955 Selling Leads, Datasheet
MFG:SOP-8 Package Cooled:IR D/C:06+/07+
NDS9953DY, NDS9953-NL, NDS9955 Datasheet download
Part Number: NDS9953DY
MFG: SOP-8
Package Cooled: IR
D/C: 06+/07+
MFG:SOP-8 Package Cooled:IR D/C:06+/07+
NDS9953DY, NDS9953-NL, NDS9955 Datasheet download
MFG: SOP-8
Package Cooled: IR
D/C: 06+/07+
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PDF/DataSheet Download
Datasheet: NDS02ZG-M6
File Size: 320036 KB
Manufacturer: POWER-ONE [Power-One]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDS02ZG-M6
File Size: 320036 KB
Manufacturer: POWER-ONE [Power-One]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDS9955
File Size: 201171 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Symbol | Parameter | NDS9955 | Units |
VDSS | Drain-Source Voltage | 50 | V |
VGSS | Gate-Source Voltage | ±20 | V |
ID | Drain Current - Continuous (Note 1a) - Pulsed |
3 | A |
10 | |||
PD | Power Dissipation for Dual Operation | 2 | |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
1.6 | W | |
1 | |||
0.9 | |||
TJ,TSTG | Operating and Storage Temperature Range | -55 to 150 | |
THERMAL CHARACTERISTICS | |||
RJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 78 | /W |
RJC | Thermal Resistance, Junction-to-Case (Note 1) | 40 | /W |