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These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDS9947 Maximum Ratings
Symbol
Parameter
NDS8947
Units
VDSS
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage
-20
V
ID
Drain Current - Continuous TA = 25 (Note 1a) - Continuous TA = 70 (Note 1a) - Pulsed TA = 25
± 3.5
A
± 2.5
± 10
PD
Power Dissipation for Dual Operation
2
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)
1.6
W
1
0.9
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
RJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
78
/W
RJC
Thermal Resistance, Junction-to-Case (Note 1)
40
/W
NDS9947 Features
`-3.5A, -20V. RDS(ON) = 0.1 @ VGS = 10V `High density cell design for extremely low RDS(ON). `High power and current handling capability in a widely used surface mount package. `Dual MOSFET in surface mount package.
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDS9948 Maximum Ratings
Symbol
Parameter
NDS9948
Units
VDSS
Drain-Source Voltage
-60
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current - Continuous TA = 25 (Note 1a) - Continuous TA = 70 (Note 1a) - Pulsed TA = 25
± 2.3
A
± 10
± 1.8
PD
Power Dissipation for Dual Operation
2
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)
1.6
W
1
0.9
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
RJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
78
/W
RJC
Thermal Resistance, Junction-to-Case (Note 1)
40
/W
NDS9948 Features
`-2.3A, -60V. RDS(ON) = 0.25 @ VGS = -10V. `High density cell design for low RDS(ON). `High power and current handling capability in a widely used surface mount package. `Dual MOSFET in surface mount package.