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SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDS9945 Maximum Ratings
Symbol
Parameter
NDS9945
Units
VDSS
Drain-Source Voltage
60
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current - Continuous (Note 1a) - Pulsed
3.5
A
10
PD
Power Dissipation for Dual Operation
2
W
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)
·3.5 A, 60 V. RDS(ON) = 0.100 W @ VGS = 10 V, RDS(ON) = 0.200 W @ VGS = 4.5 V. ·High density cell design for extremely low RDS(ON). ·High power and current handling capability in a widely used surface mount package. ·Dual MOSFET in surface mount package.