MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:SMD D/C:102
NDS9400, NDS9400/A, NDS9400A Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: SMD
D/C: 102
Description: MOSFET P-CH 30V 3.4A 8-SOIC
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PDF/DataSheet Download
Datasheet: NDS9400
File Size: 337245 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDS02ZG-M6
File Size: 320036 KB
Manufacturer: POWER-ONE [Power-One]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDS9400A
File Size: 337245 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NDS9400A |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 3.4A |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 1A, 10V |
| Input Capacitance (Ciss) @ Vds | 350pF @ 10V |
| Power - Max | 1W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | 8-SOIC |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | NDS9400A NDS9400A NDS9400ADKR ND NDS9400ADKRND NDS9400ADKR |
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
| Symbol | Parameter | NDS9400A | Units |
| VDSS | Drain-Source Voltage | -30 | V |
| VGSS | Gate-Source Voltage | ± 20 | V |
| ID | Drain Current - Continuous (Note 1a) - Pulsed |
± 3.4 | A |
| ± 10 | |||
| PD |
Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) |
2.5 | W |
| 1.2 | |||
| 1 | |||
| TJ,TSTG | Operating and Storage Temperature Range | -55 to 150 | |
| THERMAL CHARACTERISTICS | |||
| RJA | Thermal Resistance, Junction-to-Ambient (Note 1a) | 50 | /W |
| RJC | Thermal Resistance, Junction-to-Case (Note 1) | 20 | /W |
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