NDS8852H, NDS8852H-NL, NDS8858 Selling Leads, Datasheet
MFG:HNS BCPB V D Package Cooled:SOP D/C:06+/07+
NDS8852H, NDS8852H-NL, NDS8858 Datasheet download
Part Number: NDS8852H
MFG: HNS BCPB V D
Package Cooled: SOP
D/C: 06+/07+
MFG:HNS BCPB V D Package Cooled:SOP D/C:06+/07+
NDS8852H, NDS8852H-NL, NDS8858 Datasheet download
MFG: HNS BCPB V D
Package Cooled: SOP
D/C: 06+/07+
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Datasheet: NDS8852H
File Size: 357963 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: NDS02ZG-M6
File Size: 320036 KB
Manufacturer: POWER-ONE [Power-One]
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PDF/DataSheet Download
Datasheet: NDS8858H
File Size: 359143 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together.
Symbol |
Parameter |
N-Channel |
P-Channel |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 20 4.3 15 |
-30 -20 -3.4 -10 |
V V A W °C | |
ID |
Drain Current Continuous Pulsed | (Note 1a & 2) | |||
PD |
Maximum Power Dissipation (Single Device) |
(Note 1a) (Note 1b) (Note 1c) |
2.5 1.2 1 -55 to 150 | ||
TJ,TSTG | Operating and Storage Junction Temperature Range |
RJA RJC |
Thermal Resistance, Junction-to-Ambient (Single Device) Thermal Resistance, Junction-to-Case (Single Device) |
(Note 1a) (Note 1) |
50 |
°C/W °C/W |