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These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDS8425 Maximum Ratings
Symbol
Parameter
NDS331N
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage - Continuous
8
V
ID
Maximum Drain Current - Continuous (Note 1a) - Pulsed
± 7.4
A
± 20
PD
Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c)
2.5
W
1.2
1
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
RJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
50
/W
RJC
Thermal Resistance, Junction-to-Case (Note 1)
25
/W
NDS8425 Features
`7.4 A, 20 V. RDS(ON) = 0.025 @ VGS= 4.5 V. RDS(ON) = 0.03 @ VGS= 2.7V. `High density cell design for extremely low RDS(ON). `High power and current handling capability in a widely used surface mount package.