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·High level of integration - only one power semiconductor module required for the whole drive ·Fast rectifier diodes for enhanced EMC behaviour ·NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness ·Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery Industry standard package with insulated ·copper base plate and soldering pins for PCB mounting ·Temperature sense included
MUBW10-06A7 Typical Application
·Input from single or three phase grid ·Three phase synchronous or asynchronous motor ·electric braking operation
MUBW10-12 Maximum Ratings
Symbol
Conditions
Maximum
Ratings
VRRM
1600
V
IF
TC = 80°C; sine 180°
19
A
IFAVM
TC = 80°C; rectangular; d = 1/3;
18
A
IFSM
TVJ = 25°C; t = 10 ms; sine 50 Hz
160
A
Ptot
TC = 25°C
85
W
MUBW10-12 Features
·High level of integration - only one power semiconductor module required for the whole drive ·Fast rectifier diodes for enhanced EMC behaviour ·NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness ·Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery ·Industry standard package with insulated copper base plate and soldering pins for PCB mounting ·Temperature sense included
MUBW10-12 Typical Application
·Input from single or three phase grid ·Three phase synchronous or asynchronous motor ·electric braking operation
MUBW10-12A6 Maximum Ratings
Symbol
Conditions
Maximum
Ratings
VRRM
1600
V
IF
TVJ = 25°C
36
A
IFAVM
TVJ = 150°C; TK = 70°C
11
A
IFSM
TVJ = 45°C; t = 10 ms sine 50 Hz
250
A
i²t
TVJ = 125°C
310
A²s
TVJ
+150
°C
MUBW10-12A6 Features
·NPT IGBT technology Square RBSOA, no latchup ·Free wheeling diodes with Hiperfast and soft recovery behaviour ·Isolation voltage 2500 V~ ·Built in temperature sense ·High level of integration: one module for complete drive system ·Direct Copper Bonded Al2O3 ceramic base plate