MUBW10-12A6 Selling Leads, Price trend, MUBW10-12A6 DataSheet download, circuit diagram from SeekIC.com

Features: ·NPT IGBT technology Square RBSOA, no latchup·Free wheeling diodes with Hiperfast and soft recovery behaviour·Isolation voltage 2500 V~·Built in temperature sense·High level of integration: one module for complete drive system·Direct Copper Bonded Al2O3 ceramic base plateApplication· AC ...

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MUBW10-12A6: Features: ·NPT IGBT technology Square RBSOA, no latchup·Free wheeling diodes with Hiperfast and soft recovery behaviour·Isolation voltage 2500 V~·Built in temperature sense·High level of integration...

MUBW10-12A6 Data Sheet

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Part Number:: MUBW10-12A6
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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268 Transactions

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Upload time: 2024/12/21

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Recent History
What is this?

MUBW100-06A8 evaluate
Discrete Semiconductor Modules 100 Amps 600V
MUBW10-06A6 evaluate
US $26.41 - 26.41 / Piece

MODULE IGBT CBI E1
MUBW10-06A6K evaluate
Discrete Semiconductor Modules NPT IGBT 600V, 10A

Product Details

Description

Features:

·NPT IGBT technology Square RBSOA, no latchup
·Free wheeling diodes with Hiperfast and soft recovery behaviour
·Isolation voltage 2500 V~
·Built in temperature sense
·High level of integration: one module for complete drive system
·Direct Copper Bonded Al₂O₃ ceramic base plate

Application

· AC motor control
· AC servo and robot drives

Specifications

Symbol	Conditions	Maximum	Ratings
V_RRM		1600	V
I_F	T_VJ = 25°C	36	A
I_FAVM	T_VJ = 150°C; TK = 70°C	11	A
I_FSM	T_VJ = 45°C; t = 10 ms sine 50 Hz	250	A
i²t	T_VJ = 125°C	310	A²s
T_VJ		+150	°C

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MUBW10-12A6

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