Features: ·High level of integration - only one power semiconductor module required for the whole drive·Fast rectifier diodes for enhanced EMC behaviour·NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness·Epitaxial free wheeling diodes wit...
MUBW10-12: Features: ·High level of integration - only one power semiconductor module required for the whole drive·Fast rectifier diodes for enhanced EMC behaviour·NPT IGBT technology with low saturation volta...
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Symbol |
Conditions |
Maximum |
Ratings |
VRRM |
1600 |
V | |
IF |
TC = 80°C; sine 180° |
19 |
A |
IFAVM |
TC = 80°C; rectangular; d = 1/3; |
18 |
A |
IFSM |
TVJ = 25°C; t = 10 ms; sine 50 Hz |
160 |
A |
Ptot |
TC = 25°C |
85 |
W |