MTE53N50E, MTE57N50E, MTEL11490 Selling Leads, Datasheet
MFG:MOT Package Cooled:MOS
MTE53N50E, MTE57N50E, MTEL11490 Datasheet download
Part Number: MTE53N50E
MFG: MOT
Package Cooled: MOS
D/C:
MTE53N50E, MTE57N50E, MTEL11490
- Table of contents:
Info of MTE53N50E
Info of MTE57N50E
Info of MTEL11490
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About MTE53N50E
PDF/DataSheet Download
Datasheet: MTE53N50E
File Size: 171340 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTE100
PDF/DataSheet Download
Datasheet: MTE100
File Size: 71972 KB
Manufacturer: MARKTECH [Marktech Corporate]
Download : Click here to Download
About MTE100
PDF/DataSheet Download
Datasheet: MTE100
File Size: 71972 KB
Manufacturer: MARKTECH [Marktech Corporate]
Download : Click here to Download
MTE53N50E General Description
This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MTE53N50E Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
500 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
500 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
53 33 210 |
Adc |
| Total Power Dissipation Derate above 25°C |
PD |
460 3.70 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
40 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =25 Vdc, VGS = 10Vdc, PEAK IL =53Apk, L = 0.29mH, RG = 25) |
EAS |
400 |
mJ |
| RMS Isolation Voltage |
VISO |
2500 |
Vac |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
0.28 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
ISOTOP is a trademark of SGSTHOMSON Microelectronics.
MTE53N50E Features
• 2500 V RMS Isolated Isotop Package
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• Very Low Internal Parasitic Inductance
• IDSS and VDS(on) Specified at Elevated Temperature
• U. L. Recognized, File #E69369
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• Very Low Internal Parasitic Inductance
• IDSS and VDS(on) Specified at Elevated Temperature
• U. L. Recognized, File #E69369
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