MTE3055, MTE30N50E, MTE32040001BWG Selling Leads, Datasheet
MFG:ST Package Cooled:05+ D/C:09+
MTE3055, MTE30N50E, MTE32040001BWG Datasheet download
Part Number: MTE3055
MFG: ST
Package Cooled: 05+
D/C: 09+
MTE3055, MTE30N50E, MTE32040001BWG
- Table of contents:
Info of MTE3055
Info of MTE30N50E
Info of MTE32040001BWG
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About MTE100
PDF/DataSheet Download
Datasheet: MTE100
File Size: 71972 KB
Manufacturer: MARKTECH [Marktech Corporate]
Download : Click here to Download
About MTE30N50E
PDF/DataSheet Download
Datasheet: MTE30N50E
File Size: 234578 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTE100
PDF/DataSheet Download
Datasheet: MTE100
File Size: 71972 KB
Manufacturer: MARKTECH [Marktech Corporate]
Download : Click here to Download
MTE30N50E General Description
This advanced TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new energy design also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MTE30N50E Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
500 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
500 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous @ 25°C - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
30 12 80 |
Adc Apk |
| Total Power Dissipation@ 25°C Derate above 25°C |
PD |
250 2.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =100 Vdc, VGS = 10Vdc, PEAK IL =30Apk, L = 10mH, RG = 25) |
EAS |
300 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
0.5 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
ISOTOP is a trademark of SGSTHOMSON Microelectronics.
MTE30N50E Features
• 2500 V RMS Isolated ISOTOP Package
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• Very Low Internal Parasitic Inductance
• IDSS and VDS(on) Specified at Elevated Temperature
• U.L. Recognized, File #E69369
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• Very Low Internal Parasitic Inductance
• IDSS and VDS(on) Specified at Elevated Temperature
• U.L. Recognized, File #E69369
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