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MTE2010-0001AFP, MTE215N10E, MTE28649

Table of contents:
Info of MTE2010-0001AFP
Info of MTE215N10E
Info of MTE28649

MTE2010-0001AFP, MTE215N10E, MTE28649 Selling Leads, Datasheet

MFG:MITSUBISHI Package Cooled:TQFP1414-100 D/C:99+/00+

MTE2010-0001AFP, MTE215N10E, MTE28649 Picture

MTE2010-0001AFP, MTE215N10E, MTE28649 Datasheet download

Five Points

Part Number: MTE2010-0001AFP

MFG: MITSUBISHI

Package Cooled: TQFP1414-100

D/C: 99+/00+

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MTE2010-0001AFP Suppliers

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MTE1122/P
Vendor: Microchip Pack: DIP D/C: 95+& Qty: 30 Adddate: 2024-11-29
SUNKING INT'L (HK) ELECTRONICS LIMITED
Contact: Mr.RickeyChen
Tel: 86-755-61681313
Fax: 86-755-61681414
(5)

MTE1122/P
Vendor: Microchip Pack: DIP D/C: 09+& Qty: 2000 Note: 、！ Adddate: 2024-11-29
Jing Li Yuen Electronics Co., Ltd.
Contact: Ms.XianFengZhang
Tel: 0086-0755-33270467
Fax: 0086-0755-82708963
(230)

MTE125N20E
Vendor: Motorola D/C: 00+& Qty: 10 Adddate: 2024-11-29
Sunll Technology Development Limited
Contact: Mr.BillH
Tel: 86-755-82469201
Fax: 86-755-82469207
(1)

MTEL11490
Pack: PLCC D/C: 04+& Qty: 500 Adddate: 2024-11-29
Guangzhou Jiang yuan Electronics co.,Itd
Contact: Mr.Huan Rongchen
Tel: +86-020-32784225
Fax: +86-020-81875062
(5)

About MTE100

PDF/DataSheet Download

Datasheet: MTE100

File Size: 71972 KB

Manufacturer: MARKTECH [Marktech Corporate]

Download : Click here to Download

Related PDF Download

MTE1040
File Size: 66336 KB
MTE1050A
File Size: 71331 KB
MTE1070A
File Size: 72450 KB
MTE1080
File Size: 73334 KB
MTE108CL
File Size: 58928 KB

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MTE1122/P MICROCHIP - DIP - 9506+
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MTE215N10E Suppliers

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MTE1122/P
Vendor: Microchip Pack: DIP D/C: 95+& Qty: 30 Adddate: 2024-11-29
SUNKING INT'L (HK) ELECTRONICS LIMITED
Contact: Mr.RickeyChen
Tel: 86-755-61681313
Fax: 86-755-61681414
(5)

MTE1122/P
Vendor: Microchip Pack: DIP D/C: 09+& Qty: 2000 Note: 、！ Adddate: 2024-11-29
Jing Li Yuen Electronics Co., Ltd.
Contact: Ms.XianFengZhang
Tel: 0086-0755-33270467
Fax: 0086-0755-82708963
(230)

MTE125N20E
Vendor: Motorola D/C: 00+& Qty: 10 Adddate: 2024-11-29
Sunll Technology Development Limited
Contact: Mr.BillH
Tel: 86-755-82469201
Fax: 86-755-82469207
(1)

MTEL11490
Pack: PLCC D/C: 04+& Qty: 500 Adddate: 2024-11-29
Guangzhou Jiang yuan Electronics co.,Itd
Contact: Mr.Huan Rongchen
Tel: +86-020-32784225
Fax: +86-020-81875062
(5)

About MTE215N10E

PDF/DataSheet Download

Datasheet: MTE215N10E

File Size: 232197 KB

Manufacturer: MOTOROLA [Motorola, Inc]

Download : Click here to Download

Related PDF Download

MTE100
File Size: 71972 KB
MTE1040
File Size: 66336 KB
MTE1050A
File Size: 71331 KB
MTE1070A
File Size: 72450 KB
MTE1080
File Size: 73334 KB

Related Part Number

MTE1122/P MICROCHIP - DIP - 9506+
MTE2001-0001DWG SUN - BGA - 04+
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MTE2N10 M - ? - 09+
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MTE1070A - -
MTE1080 - -
MTE108CL - -
HMBTA92
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HMBT2484

MTE28649 Suppliers

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MTE1122/P
Vendor: Microchip Pack: DIP D/C: 95+& Qty: 30 Adddate: 2024-11-29
SUNKING INT'L (HK) ELECTRONICS LIMITED
Contact: Mr.RickeyChen
Tel: 86-755-61681313
Fax: 86-755-61681414
(5)

MTE1122/P
Vendor: Microchip Pack: DIP D/C: 09+& Qty: 2000 Note: 、！ Adddate: 2024-11-29
Jing Li Yuen Electronics Co., Ltd.
Contact: Ms.XianFengZhang
Tel: 0086-0755-33270467
Fax: 0086-0755-82708963
(230)

MTE125N20E
Vendor: Motorola D/C: 00+& Qty: 10 Adddate: 2024-11-29
Sunll Technology Development Limited
Contact: Mr.BillH
Tel: 86-755-82469201
Fax: 86-755-82469207
(1)

MTEL11490
Pack: PLCC D/C: 04+& Qty: 500 Adddate: 2024-11-29
Guangzhou Jiang yuan Electronics co.,Itd
Contact: Mr.Huan Rongchen
Tel: +86-020-32784225
Fax: +86-020-81875062
(5)

About MTE100

PDF/DataSheet Download

Datasheet: MTE100

File Size: 71972 KB

Manufacturer: MARKTECH [Marktech Corporate]

Download : Click here to Download

Related PDF Download

MTE1040
File Size: 66336 KB
MTE1050A
File Size: 71331 KB
MTE1070A
File Size: 72450 KB
MTE1080
File Size: 73334 KB
MTE108CL
File Size: 58928 KB

Related Part Number

MTE1122/P MICROCHIP - DIP - 9506+
MTE2001-0001DWG SUN - BGA - 04+
MTE2010-0001AFP MITSUBISHI - TQFP1414-100 - 99+/00+
MTE206N FUJISOKU - NEW AND ORIGINAL - 08+/09+
MTE2N10 M - ? - 09+
MTE3055 ST - 05+ - 09+
MTE3204-0001BWG 9849 - BGA - 08+/09+
MTE53N50E MOT - MOS -
MTE800 FUJISOKU - TO-126 - 07+
B82473A1223K000 86200 - EPCOS - 09+
CY2300SXIT CYPRESS - N/A - 09+
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EMVY630GTR331MMH0S UCC - SMD - 09+
22TIAEL 23 - 超微-10 - NO
MC68HC908GR8ACFA Motorola - -
MNM1316 PANASONIC - QFP64 - 02+
3030-100M68 IC - PLCC - N/A
1.5SMCJ188A-TR DO-214AB - PANJIT - 07+
T7270535B4DN WESTCODE - TO-200AB - 2009
MTE1040 - -
MTE1050A - -
MTE1070A - -
MTE1080 - -
MTE108CL - -
HMBT2222A
SEMiX352GB128Ds
KTD525
KTD718
KDS193
SEMiX352GB128D
SEMiX101GD126HDs
SEMiX302GB128D
SEMiX101GD128Ds
KTD1047

MTE215N10E General Description

This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

MTE215N10E Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	100	Vdc
DraintoGate Voltage (R_GS = 1.0 M)	V_DGR	100	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (t_p 10 ms)	V_GS VGSM	± 20 ± 40	Vdc Vpk
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (t_p 10 s)	I_D I_D I_DM	215 136 860	Adc
Total Power Dissipation Derate above 25°C	P_D	460 3.70	Watts W/°C
Operating and Storage Temperature Range	T_J, T_stg	40 to 150	°C
Single Pulse DraintoSource Avalanche Energy (V_DD =25 Vdc, V_GS = 10Vdc, PEAK I_L =215Apk, L = 0.017mH, R_G = 25)	E_AS	400	mJ
RMS Isolation Voltage	V_ISO	2500	Vac
Thermal Resistance - Junction to Case - Junction to Ambient	R_JC R_JA	0.28 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	T_L	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
ISOTOP is a trademark of SGSTHOMSON Microelectronics.

MTE215N10E Features

• 2500 V RMS Isolated Isotop Package
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• Very Low Internal Parasitic Inductance
• I_DSS and V_DS(on) Specified at Elevated Temperature
• U. L. Recognized, File #E69369

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