MTD1N80, MTD1N80E, MTD1N80E1 Selling Leads, Datasheet
MFG:MOT Package Cooled:TO-252 D/C:07+
MTD1N80, MTD1N80E, MTD1N80E1 Datasheet download
Part Number: MTD1N80
MFG: MOT
Package Cooled: TO-252
D/C: 07+
MTD1N80, MTD1N80E, MTD1N80E1
- Table of contents:
Info of MTD1N80
Info of MTD1N80E
Info of MTD1N80E1
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About MTD1N80E
PDF/DataSheet Download
Datasheet: MTD1N80E
File Size: 275743 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTD1N80E
PDF/DataSheet Download
Datasheet: MTD1N80E
File Size: 275743 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTD10N05E
PDF/DataSheet Download
Datasheet: MTD10N05E
File Size: 214905 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MTD1N80E General Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTD1N80E Maximum Ratings
| Rating |
Symbol |
Value |
Unit |
| Drain–to–Source Voltage |
VDSS |
800 |
Vdc |
| Drain–to–Gate Voltage (RGS = 1.0 MΩ) |
VDGR |
800 |
Vdc |
| Gate–to–Source Voltage — Continuous Gate–to–Source Voltage — Non–repetitive (tp ≤10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 μs) |
ID ID IDM |
1.0 0.8 3.0 |
Adc Apk |
| Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size |
PD |
48 0.38 1.75 |
Watts W/°C Watts |
| Operating and Storage Temperature Range |
TJ, Tstg |
–55 to 150 |
°C |
| Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, PEAK IL =2.0Apk, L = 10mH, RG = 25Ω) |
EAS |
20 |
mJ |
| Thermal Resistance — Junction to Case — Junction to Ambient — Junction to Ambient ,when mounted to minimum recommended pad size |
RθJC RθJA RθJA |
2.6 100 71.4 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
MTD1N80E Features
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
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