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MSA100U43, MSA-1023, MSA108AS

Table of contents:
Info of MSA100U43
Info of MSA-1023
Info of MSA108AS

MSA100U43, MSA-1023, MSA108AS Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:Module D/C:N/A

MSA100U43, MSA-1023, MSA108AS Datasheet download

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Part Number: MSA100U43

MFG: TOSHIBA

Package Cooled: Module

D/C: N/A

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MSA-1023 General Description

The MSA-1023 is a high performance, medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, BeO flange package for good thermal characteristics.

This MMIC is designed for use in a push-pull configuration in a 25 system. The MSA-1023 can also be used as a single-ended amplifier in a 50 system with slightly reduced performance. Typical applications include narrow and broadband RF amplifiers in industrial and military systems.

The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

MSA-1023 Maximum Ratings

Parameter	Absolute Maximum^[1]
Device Current	425 mA
Power Dissipation^[2,3]	7.0W
RF Input Power	+25 dBm
Junction Temperature	200
Storage Temperature	65 to 200

Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T_CASE = 25.
3. Derate at 66.7 mW/ for T_C > 95.
4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information.

MSA-1023 Features

• High Output Power: +27 dBm Typical P1dB at 1.0 GHz
• Low Distortion: 37 dBm Typical IP3 at 1.0 GHz
• 8.5 dB Typical Gain at 1.0 GHz
• Hermetic, Metal/Beryllia Stripline Package
• Impedance Matched to 25 for Push-Pull Configurations

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