Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
The MSA-0170 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic high reliability package. This MMIC is designed for use as a general purpose 50 W gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications.
The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
MSA-0170 Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
40 mA
Power Dissipation[2,3]
200 mW
RF Input Power
+13 dBm
Junction Temperature
200°C
Storage Temperature
65 to 200°C
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 8 mW/°C for TC > 175°C. 4. The small spot size of this technique results in a higher, though more accurate determination of qjc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information.
MSA-0170 Features
• Cascadable 50 W Gain Block • 3 dB Bandwidth: DC to 1.3 GHz • High Gain: 18.5 dB Typical at 0.5 GHz • Unconditionally Stable (k>1) • Hermetic Gold-ceramic Microstrip Package