Features: • Cascadable 50 W Gain Block• 3 dB Bandwidth: DC to 1.3 GHz• High Gain: 18.5 dB Typical at 0.5 GHz• Unconditionally Stable (k>1)Specifications Parameter Absolute Maximum[1] Device Current 40 mA Power Dissipation[2,3] 200 mW RF Input Power +20 ...
MSA-0100: Features: • Cascadable 50 W Gain Block• 3 dB Bandwidth: DC to 1.3 GHz• High Gain: 18.5 dB Typical at 0.5 GHz• Unconditionally Stable (k>1)Specifications Parameter Ab...
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Parameter | Absolute Maximum[1] |
Device Current | 40 mA |
Power Dissipation[2,3] | 200 mW |
RF Input Power | +20 dBm |
Junction Temperature | 200°C |
Storage Temperature | 65 to 200°C |
The MSA-0100 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general purpose 50 W gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications.
The MSA-0100 is fabricated using HP's 10 GHz fT, 25Ê GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
The MSA-0100 recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.[1] See APPLICATIONS section, "Chip Use".