Features: • Cascadable 50 Gain Block• 3 dB Bandwidth: DC to 1.2 GHz• High Gain: 18.5 dB Typical at 0.5 GHz• Unconditionally Stable (k>1)• Cost Effective Ceramic Microstrip PackageSpecifications Parameter Absolute Maximum[1] Device Current 40 mA Power ...
MSA-0135: Features: • Cascadable 50 Gain Block• 3 dB Bandwidth: DC to 1.2 GHz• High Gain: 18.5 dB Typical at 0.5 GHz• Unconditionally Stable (k>1)• Cost Effective Ceramic Mic...
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Parameter | Absolute Maximum[1] |
Device Current | 40 mA |
Power Dissipation[2,3] | 200mW |
RF Input Power | +13 dBm |
Junction Temperature | 200 |
Storage Temperature | 65 to 200 |
The MSA-0135 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a cost effective, microstrip package. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications.
The MSA-0135 is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.
Available in cut lead version (package 36) as MSA-0136.