Features: • Cascadable 50 W Gain Block• 3 dB Bandwidth: DC to 1.3 GHz• High Gain: 18.5 dB Typical at 0.5 GHz• Unconditionally Stable (k>1)• Hermetic Gold-ceramic Microstrip PackageSpecifications Parameter Absolute Maximum[1] Device Current 40 mA Power ...
MSA-0170: Features: • Cascadable 50 W Gain Block• 3 dB Bandwidth: DC to 1.3 GHz• High Gain: 18.5 dB Typical at 0.5 GHz• Unconditionally Stable (k>1)• Hermetic Gold-ceramic Mic...
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Parameter | Absolute Maximum[1] |
Device Current | 40 mA |
Power Dissipation[2,3] | 200 mW |
RF Input Power | +13 dBm |
Junction Temperature | 200°C |
Storage Temperature | 65 to 200°C |
The MSA-0170 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic high reliability package. This MMIC is designed for use as a general purpose 50 W gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications.
The MSA-0170 is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.