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The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range. Internal impedance matching assures optimum gain and efficiency across the entire frequency band. Gold metalization and emitter ballast resistors assures infinite VSWR capability and long term reliability.
MS1455 Maximum Ratings
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
36
V
VCEO
Collector-emitter Voltage
4.0
V
VEBO
Emitter-Base Voltage
18
V
VCES
Collector-Emitter Voltage
36
V
PDISS
Power Dissipation
150
W
IC
Device Current
9.0
A
TJ
Junction Temperature
+200
TSTG
Storage Temperature
-65 to +150
MS1455 Features
• 836 MHz • 12.5 VOLTS • POUT = 45 WATTS • GP = 4.7 dB MINIMUM • COMMON BASE CONFIGURATION