Features: `Optimized for SSB`30 MHz`28 Volts`IMD 30dB`Common Emitter`Gold Metallization`POUT = 130 W PEP`GP = 12 dB GainApplication·HF SSB ApplicationsPinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 35 V VEBO ...
MS1078: Features: `Optimized for SSB`30 MHz`28 Volts`IMD 30dB`Common Emitter`Gold Metallization`POUT = 130 W PEP`GP = 12 dB GainApplication·HF SSB ApplicationsPinoutSpecifications Symbol Parameter Va...
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Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | 70 | V |
VCEO | Collector-Emitter Voltage | 35 | V |
VEBO | Emitter-Base Voltage | 4.0 | V |
IC | Device Current | 12 | A |
PDISS | Power Dissipation | 1175 | M |
TJ | Junction Temperature | +200 | |
TSTG | Storage Temperature | -65 to +150 |
The MS1078 is a Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions.