Features: • 30 MHz• 50 VOLTS• POUT = 220 W• GP = 13 dB MINIMUM• COMMON EMITTER CONFIGURATIONPinoutSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 110 V VCEO Collector-emitter Voltage 55 V VEBO Emitter-Base Voltage 4.0 V...
MS1079: Features: • 30 MHz• 50 VOLTS• POUT = 220 W• GP = 13 dB MINIMUM• COMMON EMITTER CONFIGURATIONPinoutSpecifications Symbol Parameter Value Unit VCBO Collector-...
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Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | 110 | V |
VCEO | Collector-emitter Voltage | 55 | V |
VEBO | Emitter-Base Voltage | 4.0 | V |
IC | Device Current | 12 | A |
PDISS | Power Dissipation | 320 | W |
TJ | Junction Temperature | +200 | |
TSTG | Storage Temperature | -65 to +150 |
The MS1079 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.